FIELD-EFFECT TRANSISTOR BASED ON REDUCED GRAPHENE OXIDE

Graphene field-effect transistors are recognized as a potential alternative to metal-oxide-semiconductor and can become new element base in the post-silicon epoch. Increasing efficiency of graphene electronic devices simplifying their manufacturing technology important R&D areas. New technical solutions related development proposed paper. A reduced oxide (RGO) film was used conducting channel transistor. film-forming suspension RGO obtained by chemical reduction with hydrazine monohydrate deposited on silicon substrate SiO 2 layer air-dried at room temperature. comparative analysis ultraviolet visible absorbance spectra films glass indicates high degree nanosheet reduction. The electrical properties transistor based were studied DC AC modes. nonlinear character I D - V curves revealed. significant influence electrically active defects bipolar conductivity established current-voltage characteristics dependence resistance conductive gate voltage. An switching revealed sections linear drain current voltage G an / off ratio more than two orders magnitude. sensitivity near point charge neutrality local electric field be create photo- gas-sensitive sensor Key words : transistor, oxide, characteristic, characteristic.